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Precision matters

World-class competitiveness based on

differentiated technology and industry-leading expertise

Silicon

HANA Materials, growing with technology and future, We will head toward the customer-centric management for Silicon products.

Silicon is a dark gray-colored metallic substance with the chemical symbol, “Si”. Silicon used in semiconductor process is monocrystalline silicon which is ultra-high pure metal silicon that is three dimensionally well-organized.

We, as a company that internally possesses core technology including the design of Hot Zone (polysilicon melting furnace) which is the core parts of ingot growing facilities and growth factor optimization developed the ingot with more than 520mm of diameter, for the first time in South Korea.

Electrode

Description

Wafer etching by applying RF power to the gas flowing through the micro holes on silicon plates and making into the state of plasma.

Applications

Dry etcher process

Specification

Properties

Value

Material

Single Crystal Silicon

Out diameter

550mm ~ 240mm

Resistivity(Ω.㎝)

Low Res. (< 0.02)
Middle Res. (1~4)
High Res. (60~90)

RRG < 5%

< 5%

Gas hole

Diameter 0.8~0.2mm
Roundness < 0.02mm
Concentricity < 0.02mm
Δ XY-Position < 0.05mm

Surface condition

Polishing, Lapping, Grinding

Surface Flatness

< 10 ㎛

Machining precision

< 10 ㎛

Quality

Chipping, Scratch, Crack free
Contamination, Stain free

Ring

Description

The silicon ring mounted around wafer on ESC serves to maintain a uniform plasma density and etching rate

Applications

Dry etcher process
Focus Ring
Insert Ring
Collar Ring
Shield Ring
Hot Edge Ring
Protection Ring
Etc

Specification

Properties

Value

Material

Single Crystal Silicon
Multi Crystal Silicon

Out diameter

580mm ~ 240mm

Resistivity(Ω.㎝)

Low Res. (< 0.02)
Middle Res. (1~4)
High Res. (60~90)

RRG < 5%

< 5%

Surface condition

Polishing, Lapping, Grinding

Surface Flatness

< 10 ㎛

Machining precision

< 15 ㎛

Quality

Chipping, Scratch, Crack free
Contamination, Stain free

Silicon Ingot

Applications

Single Crystal Ingot

Silicon electrode
Silicon ring
Silicon parts

Multi-Crystalline “Poly” Ingot

Silicon ring
Silicon parts

Specification

Properties

Single Crystal Ingot

Multi-Crystalline “Poly” Ingot

Purity (%)

> 8N

> 6N

Diameter / Size (mm)

300~600

980*980*280

Type/Doped

P,N/Boron,Phosphorus

P/Boron

Resistivity (Ω.cm)

Low Res. (< 0.02)
Middle Res. (1~4)
High Res. (60~90)

Middle Res. (1~4)

RRG (%)

< 5

< 8

Oxygen concentration (ppma)

≤ 13

≤ 20

Carbon concentration (ppma)

≤ 0.5

≤ 1

개인정보처리방침

HANA Materials Inc. /
50, 3gongdan 3-ro, Seobuk-gu, Cheonan-si, Chungcheongnam-do / TEL 041-410-1015

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